TM MATERIAL SEMIKONDUKTOR ZnO DIDOPING Cu UNTUK MENINGKATKAN KONDUKTIVITAS THERMAL

MATERIAL SEMIKONDUKTOR ZnO DIDOPING Cu UNTUK MENINGKATKAN KONDUKTIVITAS THERMAL

  • Bayu Prabandono Teknik Mesin Industri, Politeknik ATMI Surakarta
  • Agus Kurniawan Teknik Mesin Industri, Politeknik ATMI Surakarta
  • Bram Armunanto Teknik Mesin Industri, Politeknik ATMI Surakarta

Abstract

Manufacture of semiconductor material ofzinc oxide (ZnO) doped with copper (Cu) aims to obtain a good p-type semiconductor material ZnO1-xCuxO. Materials zinc nitrate tetra hydrate and copper nitrate trihydratearean initial material which are combined through a process of mixing the powder in solution with varying content Cu of 0%, 2%, 4%, 6% and 8% mol. Next, the solution is dried, calcined and compacted into pellet form. The pellet is sintered with temperature 1300oC. Results of testing showed the characteristics of materials Zn1-xCuxO containing Cu and testing operating temperature at 450oC generates biggest value for the thermal conductivity of 1.85 W / mK. The amount of material doping affect the the thermal conductivity Keywords: p–type semiconductor materials , thermal conductivity, Cu doped ZnO.

Author Biographies

Bayu Prabandono, Teknik Mesin Industri, Politeknik ATMI Surakarta

Teknik Mesin Industri, Politeknik ATMI Surakarta

Agus Kurniawan, Teknik Mesin Industri, Politeknik ATMI Surakarta

Teknik Mesin Industri, Politeknik ATMI Surakarta

Bram Armunanto, Teknik Mesin Industri, Politeknik ATMI Surakarta

Teknik Mesin Industri, Politeknik ATMI Surakarta

Published
2018-05-30